N channel：VDS =30V,ID =25A；RDS(ON) <12mΩ @ VGS=10V；RDS(ON) <18mΩ @ VGS=4.5V
p channel ：VDS =-30V,ID =-19A；RDS(ON) <35mΩ @ VGS=-10V；RDS(ON) <65mΩ @ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
N channel：VDS =30V,ID =25A；RDS(ON) <12mΩ @ VGS=10V；RDS(ON) <18mΩ @ VGS=4.5V
p channel ：VDS =-30V,ID =-19A；RDS(ON) <35mΩ @ VGS=-10V；RDS(ON) <65mΩ @ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
