VDS=85V,ID=250A RDS(ON)=2.2mΩ (typical) @ VGS=10V
Excellent gate charge x RDS(on)product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
VDS=85V,ID=250A RDS(ON)<2.6mΩ @ VGS=10V
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
VDS=85V,ID=250A RDS(ON)<2.8mΩ @ VGS=10V
Excellent gate charge x RDS(on)product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
VDS=85V,ID=250A RDS(ON)<2.0mΩ @ VGS=10V
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
VDS =85V,ID =330A RDS(ON)=1.6mΩ , typical @ VGS=10V
Pb-free lead plating
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
VDS =85V,ID =300A RDS(ON) <2.2mΩ @ VGS=10V
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
VDS =88V,ID =14A RDS(ON)=8.8mΩ (typical) @ VGS=10V RDS(ON)=9.8mΩ (typical) @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
VDS =88V,ID =18A RDS(ON)=6.1mΩ (typical) @ VGS=10V RDS(ON)=7.1mΩ (typical) @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
Q1 "High Side" MOSFET：VDS =30V,ID =25A；RDS(ON) <8.1mΩ @ VGS=10V；RDS(ON)<11mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS =30V,ID =75A；RDS(ON) <4.4mΩ @ VGS=10V；RDS(ON) <5.6mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb free terminal plating
RoHS compliant
Halogen free
Q1 "High Side" MOSFET：VDS =30V,ID =25A；RDS(ON) <8.1mΩ @ VGS=10V；RDS(ON)<11mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS =30V,ID =75A；RDS(ON) <4.4mΩ @ VGS=10V；RDS(ON) <5.6mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb free terminal plating
RoHS compliant
Halogen free
Q1 "High Side" MOSFET：VDS =30V,ID =30A；RDS(ON) <5.8mΩ @ VGS=10V；RDS(ON)<8.9mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS =30V,ID =100A；RDS(ON) <1.9mΩ @ VGS=10V；RDS(ON) <2.8mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb free terminal plating
RoHS compliant
Halogen free
Q1 "High Side" MOSFET：VDS =30V,ID =30A；RDS(ON) <5.8mΩ @ VGS=10V；RDS(ON)<8.9mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS =30V,ID =100A；RDS(ON) <1.9mΩ @ VGS=10V；RDS(ON) <2.8mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb free terminal plating
RoHS compliant
Halogen free
