NCEAP60ND60G
NCEAP60T12AD
NCEAP60T12AK
NCEAP60T15G
NCEAP60T20D
NCEAS065R022T4
NCEAS065R030T4
NCEB301G
Q1 "High Side" MOSFET：VDS =30V,ID =20A；RDS(ON) <8.5mΩ @ VGS=10V；RDS(ON)<14mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS =30V,ID =35A；RDS(ON) <7mΩ @ VGS=10V；RDS(ON) <12mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
NCEB301G
Q1 "High Side" MOSFET：VDS =30V,ID =20A；RDS(ON) <8.5mΩ @ VGS=10V；RDS(ON)<14mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS =30V,ID =35A；RDS(ON) <7mΩ @ VGS=10V；RDS(ON) <12mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
NCEB301Q
Q1 "High Side" MOSFET：VDS =30V,ID =15A；RDS(ON) <11.5mΩ @ VGS=10V；RDS(ON)<19mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS =30V,ID =20A；RDS(ON) <8.2mΩ @ VGS=10V；RDS(ON) <13mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM）
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
NCEB301Q
Q1 "High Side" MOSFET：VDS =30V,ID =15A；RDS(ON) <11.5mΩ @ VGS=10V；RDS(ON)<19mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS =30V,ID =20A；RDS(ON) <8.2mΩ @ VGS=10V；RDS(ON) <13mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM）
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
NCEB302Q
NCEP008N30GU
NCEP008NH40AGU
DC/DC Converter
Ideal for high-frequency switching and synchronous rectification
NCEP008NH40GU
DC/DC Converter
Ideal for high-frequency switching and synchronous rectification
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