NCEPB303GU

General Features

•Q1 “High Side” MOSFET：VDS =30V,ID =30A；RDS(ON) <5.8mΩ @ VGS=10V；RDS(ON)<8.9mΩ @ VGS=4.5V

Q2 “Low Side” MOSFET：VDS =30V,ID =100A；RDS(ON) <1.9mΩ @ VGS=10V；RDS(ON) <2.8mΩ @ VGS=4.5V

•Excellent gate charge x RDS(on) product(FOM)

•Very low on-resistance RDS(on)

•150 °C operating temperature

•Pb free terminal plating

•RoHS compliant

•Halogen free

Application

•Compact DC/DC converter applications