NCEPB302G

General Features

• Q1 “High Side” MOSFET：VDS =30V,ID =25A；RDS(ON) <8.1mΩ @ VGS=10V；RDS(ON)<11mΩ @ VGS=4.5V
• Q2 “Low Side” MOSFET：VDS =30V,ID =75A；RDS(ON) <4.4mΩ @ VGS=10V；RDS(ON) <5.6mΩ @ VGS=4.5V

• Excellent gate charge x RDS(on) product(FOM)

• Very low on-resistance RDS(on)

• 150 °C operating temperature

• Pb free terminal plating

• RoHS compliant

• Halogen free

Application

• Compact DC/DC converter applications