NCEB301Q

General Features

  • Q1 “High Side” MOSFET：VDS =30V,ID =15A；RDS(ON) <11.5mΩ @ VGS=10V；RDS(ON)<19mΩ @ VGS=4.5V
  • Q2 “Low Side” MOSFET：VDS =30V,ID =20A；RDS(ON) <8.2mΩ @ VGS=10V；RDS(ON) <13mΩ @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
     

    Application

  • Compact DC/DC converter applications
NCEB301Q (2)

The NCEB301Q is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3X3 package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Q2"Low Side" MOSFET uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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