NCEB301G

General Features

Q1 “High Side” MOSFET：VDS =30V,ID =20A；RDS(ON) <8.5mΩ @ VGS=10V；RDS(ON)<14mΩ @ VGS=4.5V

Q2 “Low Side” MOSFET：VDS =30V,ID =35A；RDS(ON) <7mΩ @ VGS=10V；RDS(ON) <12mΩ @ VGS=4.5V

  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS testedApplication

    Compact DC/DC converter applications

NCEB301G (2)

The NCEB301G is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side"MOSFET is desgined to minimze switching losses. TheQ2"Low Side" MOSFET uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge.

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