NCE6602N

General Features

  • N-Channel：VDS = 30V,ID = 3.5A；RDS(ON) <58mΩ @ VGS=10V；RDS(ON) < 95mΩ @ VGS=4.5V
  • P-Channel：VDS = -30V,ID = -2.7A；RDS(ON) < 100mΩ @ VGS=-10V；RDS(ON) < 150mΩ @ VGS=-4.5V
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakag
NCE6602N

The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application.

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