NCE60NP2016G

General Features

         N channel

• VDS=60V,ID=20A；RDS(ON)<28mΩ @ VGS=10V；RDS(ON)<32mΩ @ VGS=4.5Vp channel
• VDS=-60V,ID=-16A；RDS(ON)<60mΩ @ VGS=-10V；RDS(ON)<72mΩ @ VGS=-4.5V

• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good stability and uniformity with high EAS

• Excellent package for good heat dissipation
• Special process technology for high ESD capability

Application

• H-bridge
• Inverters