NCE60NP2012K

General Features

N channel

• VDS=60V,ID=20A；RDS(ON)<23mΩ @ VGS=10V；RDS(ON)<30mΩ @ VGS=4.5V

p channel

• VDS=-60V,ID=-12A；RDS(ON)<100mΩ @ VGS=-10V；RDS(ON)<125mΩ @ VGS=-4.5V

• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good stability and uniformity with high E

AS

• Excellent package for good heat dissipation
• Special process technology for high ESD capability

Application

• H-bridge
• Inverters