NCE603S

General Features

N channel

• VDS=60V,ID=5A；RDS(ON)<28mΩ @ VGS=10V；RDS(ON)<38mΩ @ VGS=4.5V

p channel

• VDS=-60V,ID=-4A；RDS(ON)<80mΩ @ VGS=-10V

• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good stability and uniformity with high EAS

• Excellent package for good heat dissipation
• Special process technology for high ESD capability

Application

• H-bridge
• Inverters