NCE30NP1812K

General Features

  • N-Channel：VDS =30V,ID =18A；RDS(ON) < 41mΩ @ VGS=10V；RDS(ON) < 54mΩ @ VGS=4.5V
  • P-Channel：VDS =-30V,ID = -12A；RDS(ON) <58mΩ @ VGS=-10V；RDS(ON) < 85mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
NCE30NP1812K

The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

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