NCE30D2519K

General Features

N channel

• VDS =30V,ID =25A；RDS(ON) <12mΩ @ VGS=10V；RDS(ON) <18mΩ @ VGS=4.5V

p channel

• VDS =-30V,ID =-19A；RDS(ON) <35mΩ @ VGS=-10V；RDS(ON) <65mΩ @ VGS=-4.5V

• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good stability and uniformity with high EAS
• Excellent package for good heat dissipation
• Special process technology for high ESD capability

Application

• H-bridge
• Inverters