BXT420N03M

General Description
This Power MOSFET has been developed using advanced
trench process, which is specifically designed to minimize
input capacitance and gate charge. This renders the device
suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and
computer applications, and applications with low gate

FEATURES
·RDSON≤42mΩ @Vgs=10V, Id=4A
·Excellent RDS(ON) and Low Gate Charge
·Lead free