BXT170N06D
60V 50A N-Channel Enhancement Mode Power MOSFET
Features
RDSON≤17m2 @Vgs=10V, Id=30A
Advanced trench technology
Excellent Rosom and Low Gate Charge
60V 50A N-Channel Enhancement Mode Power MOSFET
Features
RDSON≤17m2 @Vgs=10V, Id=30A
Advanced trench technology
Excellent Rosom and Low Gate Charge
Application
。Load Switch
.PWM Application
*Power management
Lead free product is acquired
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