BXT170N06D

60V 50A N-Channel Enhancement Mode Power MOSFET
Features
RDSON≤17m2 @Vgs=10V, Id=30A
Advanced trench technology
Excellent Rosom and Low Gate Charge

BXT170N06D Datasheet_V1.0 EN

60V 50A N-Channel Enhancement Mode Power MOSFET
Features
RDSON≤17m2 @Vgs=10V, Id=30A
Advanced trench technology
Excellent Rosom and Low Gate Charge
Application
。Load Switch
.PWM Application
*Power management
Lead free product is acquired