NCE60NP1515K

General Features

N channel

  • VDS =60V,ID =15A;RDS(ON) <70mΩ @ VGS=10V;RDS(ON) <80mΩ @ VGS=4.5V

p channel

  • VDS =-60V,ID =-15A;RDS(ON) <65mΩ @ VGS=-10V;RDS(ON) <85mΩ @ VGS=-4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability

Application

  • H-bridge
  • Inverters
NCE60NP1515K (1)

The NCE60NP1515K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.