NCE4688

General Features

  • N-Channel：VDS = 60V,ID =6.3A；RDS(ON) < 30mΩ @ VGS=10V
  • P-Channel：VDS = -60V,ID = -6A；RDS(ON) < 80mΩ @ VGS=-10V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
NCE4688

The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

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