NCE40NP2815G

General Features

N channel

• VDS=40V,ID=28A；RDS(ON)<18mΩ @ VGS=10V；RDS(ON)<28mΩ @ VGS=4.5V

p channel

• VDS=-40V,ID=-15A；RDS(ON)<35mΩ @ VGS=-10V；RDS(ON)<45mΩ @ VGS=-4.5V

• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good stability and uniformity with high E

AS

• Excellent package for good heat dissipation
• Special process technology for high ESD capability

Application

• H-bridge
• Inverters