NCE609*

General Features

  • N-Channel:VDS =40V,ID =21A;RDS(ON) < 19mΩ @ VGS=10V;RDS(ON) < 29mΩ @ VGS=4.5V
  • P-Channel:VDS =-40V,ID = -14A;RDS(ON) <35mΩ @ VGS=-10V;RDS(ON) < 45mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
NCE609

The NCE609 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.