NCE30NP07S

General Features

  • N-Channel：VDS = 30V,ID =6.5A；RDS(ON) < 24mΩ @ VGS=10V；RDS(ON) < 37mΩ @ VGS=4.5V
  • P-Channel：VDS = -30V,ID = -7A；RDS(ON) < 32mΩ @ VGS=-10V；RDS(ON) < 70mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
NCE30NP07S

The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

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