The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
NCE20NP1006S
General Features
- N-Channel：VDS = 20V,ID =10A；RDS(ON) < 14mΩ @ VGS=4.5V；RDS(ON) < 18mΩ @ VGS=2.5V
- P-Channel：VDS = -20V,ID = -6A；RDS(ON) < 45mΩ @ VGS=-4.5V；RDS(ON) < 60mΩ @ VGS=-2.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- Pb free terminal plating
- RoHS compliant
- Halogen free
Application
- Power Management
Products
Related Topics
[contact-form-7 id="6bab151" title="Contact form"]
Login
Register
