NCE2003

General Features

  • N-Channel：VDS = 20V,ID =3A；RDS(ON) < 45mΩ @ VGS=4.5V；RDS(ON) < 60mΩ @ VGS=2.5V
  • P-Channel：VDS = -20V,ID = -3A；RDS(ON) < 110mΩ @ VGS=-4.5V；RDS(ON) < 140mΩ @ VGS=-2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
NCE2003

The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

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