NCE65N900K

Features

  • Optimized body diode reverse recovery performance
  • Low on-resistance and low conduction losses
  • Small package
  • Ultra Low Gate Charge cause lower driving requirements
  • 100% Avalanche Tested
  • ROHS compliant

Application

  • Power factor correction（PFC）
  • Switched mode power supplies(SMPS)
  • Uninterruptible Power Supply（UPS）
  • LLC Half-bridge
NCE65N900K

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

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